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PDF DB3 Data sheet ( Hoja de datos )
| Número de pieza | DB3 | |
| Descripción | SILICON BIDIRECTIONAL DIACS | |
| Fabricantes | HY ELECTRONIC | |
| Logotipo |  |
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 1. Bidirectional Diac ( PDF )  Hay una vista previa y un enlace de descarga de DB3 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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DB3,DB4,DB6
SILICON
BIDIRECTIONAL DIACS
POWER DISSIPATION 150 mW
FEATURES
DO- 41
●Three way layer two terminal, axial lead ,
hermetically sealed diacs are designed specifically for
triggering thyrisitors .The demonstrate low breakover current.
The breakover symmetry is within three volts(DB3,DB4)
or four volts(DB6).These diacs are intended for
1.0(25.4)
MIN
www.DatauSsheeient4thUy.croismitors phase control.,circuits for lamp
dimming universal motor speed control and heat
control
.205(5.2)
MAX
●This diocle is also avaiable in the DO-41case.
.034(0.9)
.028(0.7)
DIA
..100870((22..70))DIA
DO-35(GLASS)
1.083(27.5)
MIN
.020
(0.51)
TYP.
.150(3.8)
MAX
.079 MAX
(2.0)
1.0(25.4)
MIN
1.083(27.5)
MIN
ABSOLUTE RATINGS
Dimensions in inches and (millimeters)
PARAMETERS
Power Dissipation on Printed
Cir cuit(L=10mm)
TA=50℃
Repetitive Peak on-state
Tp=10uS
Current
f=100HZ
Storage and Operating Juntion Temperature
ELECTRICAL CHARACTERISTICS
SYMBOL
Pc
ITRM
TSTG/TJ
DB3
VALUE
DB4
150
2.0
-44 to+125/-40 to+110
DB6
PAPRAMETERS
Breakover Voltage*
Breakover Voltage Symmetry
Dynamic Breakover Voltage
Output Voltage*
Breakover Current*
Rise Time*
Leakage Current*
SYMBOLS
VBO
1+VBOI-
1-VBOI
1±△V1
VO
IBO
tr
IB
TEST CONDITIONS
C=22nf**
See Diagram 1
C=22nf**
See Diagram 1
△I=(IBO to IF=10mA)
See FIG 1
See FIG 2
C=22nf**
See FIG 3
IB=0.5 VBO MAX
See FIG 3
Min
Typ
Max
Max
Min
Min
Max
Typ
Max
DB3
28
32
36
VALUE
DB4
35
40
45
±3
DB6
56
60
70
5
5
100
1.5
10
NOTE:* Electrical characteristics applicable in both forward and reverse directions.
** Connected in parallel with the devices.
~ 211 ~
UNITS
mW
A
℃
UNITS
V
V
V
V
uA
uS
uA
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet DB3.PDF ] | |
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