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Numéro de référence | 2SC1383 | ||
Description | (2SC1383 / 2SC1384) Plastic-Encapsulate Transistors | ||
Fabricant | TRANSYS Electronics | ||
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1 Page
Transys
Electronics
LIMITED
TO-92L Plastic-Encapsulate Transistors
2SC1383
2SC1384
FEATURE
Power dissipation
TRANSISTOR (NPN)
w.DataSheet4U.com
PCM:
1 W (Tamb=25℃)
Collector current
ICM: 1
Collector-base voltage
A
V(BR)CBO:
2SC1383: 30 V
2SC1384: 50 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
2SC1383
2SC1384
2SC1383
2SC1384
Symbol
V(BR)CBO
Test conditions
Ic= 10µA , IE=0
V(BR)CEO
IC=2mA , IB=0
V(BR)EBO
IE= 10µA, IC=0
ICBO VCB=20V , IE=0
hFE(1)
VCE=10 V, IC= 500mA
hFE(2)
VCE=5 V, IC= 1A
VCE(sat)
IC= 500m A, IB=50mA
VBE(sat) IC= 500mA , IB= 50mA
MIN
30
50
25
50
5
85
50
Transition frequency
fT
VCE= 10 V, IC= 50mA
100
MAX
UNIT
V
V
V
0.1 µA
340
0.4 V
1.2 V
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
Q
85-170
R
120-240
S
170-340
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Pages | Pages 1 | ||
Télécharger | [ 2SC1383 ] |
No | Description détaillée | Fabricant |
2SC1383 | Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification) | Panasonic Semiconductor |
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2SC1383 | (2SC1383 / 2SC1384) Plastic-Encapsulate Transistors | TRANSYS Electronics |
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