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PDF K3767 Data sheet ( Hoja de datos )
| Número de pieza | K3767 | |
| Descripción | MOSFET ( Transistor ) - 2SK3767 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K3767 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK3767
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3767
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.)
• High forward transfer admittance: |Yfs| = 1.6S (typ.)
• Low leakage current: IDSS = 100μA (VDS = 600 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
www.DataSheet4U.comMaximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
Rating
Unit
VDSS 600 V
VDGR 600 V
VGSS ±30 V
ID 2
A
IDP 5
PD 25 W
EAS 93 mJ
IAR 2 A
EAR DataShe4et4U.commJ
Tch 150 °C
Tstg
-55~150
°C
Thermal Characteristics
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
5.0
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C（initial））, L = 41mH, RG = 25 Ω , IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2
3
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1 2004-12-10
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2SK3767
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rth – tw
10
3
1 Duty=0.5
0.3 0.2
0.1
0.1 0.05
0.03 0.02
0.01
0.003
0.001
10μ
0.01
100μ
SINGLE PULSE
PDM
t
T
Duty = t/T
Rth (ch-c) = 5℃/W
1ｍ
10ｍ
100ｍ
Pulse width tw (s)
1
10
et4U.com
Safe operating area
100
200
160
10 ID max (PULSED) *
ID max (CONTINUOUS) *
1 DC OPERATION
Tc = 25°C
100 µs *
120
DataSheet4U.com
80
1 ms *
40
EAS – Tch
0.1
※ Single nonrepetitive pulse
Tc=25℃
0.01
Curves must be derated linearly with
increase in temperature.
1 10
VDSS max
100
Darin-source voltage VDS (V)
1000
0
25 50
75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVE FORM
RG = 25 Ω
VDD = 90 V, L = 41mH
ΕAS
=
1
2
⋅L ⋅I2
⋅
⎜⎜⎝⎛
B
BVDSS
VDSS − VDD
⎟⎟⎠⎞
DataShee
DataSheet4U.com
DataSheet4 U .com
5 2004-12-10
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K3767.PDF ] | |
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