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PDF 9435GM Data sheet ( Hoja de datos )

Número de pieza 9435GM
Descripción SSM9435GM
Fabricantes SSM 
Logotipo SSM Logotipo



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No Preview Available ! 9435GM Hoja de datos, Descripción, Manual

SSM9435GM
P-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
R DS(ON)
ID
-30V
50m
-5.3A
Pb-free; RoHS-compliant SO-8
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D
D
D
D
SO-8
G
S
SS
DESCRIPTION
The SSM9435GM acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as battery
management and general high-side switch circuits.
The SSM9435GM is supplied in an RoHS-compliant
SO-8 package, which is widely used for medium power
commercial and industrial surface mount applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID
IDM
PD
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 70°C
Total power dissipation, TC = 25°C
Linear derating factor
Value
-30
±20
-5.3
-4.7
-20
2.5
0.02
Units
V
V
A
A
A
W
W/°C
TSTG
TJ
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
RΘJA
Parameter
Maximum thermal resistance, junction-ambient3
-55 to 150
-55 to 150
°C
°C
Value
50
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on a square inch of copper pad on FR4 board ; 125°C/W when mounted on the minimum pad area required for soldering.
2/12/2006 Rev.3.01
www.SiliconStandard.com
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9435GM pdf
PHYSICAL DIMENSIONS
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D
H
E
e
A
C
B
SSM9435GM
SYMBOL
MIN
MAX
A 1.35 1.75
A1 0.10 0.25
B 0.33 0.51
C 0.19 0.25
D 4.80 5.00
E 3.80 4.00
e 1.27(TYP)
H 5.80 6.50
L 0.38 1.27
L All dimensions in millimeters.
Dimensions do not include mold protrusions.
PART MARKING
XXXXXX
YWWSSS
PART NUMBER: 9435GM
DATE/LOT CODE: (YWWSSS)
Y = last digit of the year
WW = week
SSS = lot code sequence
PACKING: Moisture sensitivity level MSL3
3000 pcs in antistatic tape on a 13 inch (330mm) reel packed in a moisture barrier bag (MBB).
2/12/2006 Rev.3.01
www.SiliconStandard.com
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