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IRFP4321PBF fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRFP4321PBF
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRFP4321PBF fiche technique
PD - 97106
IRFP4321PbF
Applications
l Motion Control Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l Hard Switched and High Frequency Circuits
Benefits
l Low RDSON Reduces Losses
l Low Gate Charge Improves the Switching
Performance
www.DataSlheeImt4Up.rcoomved Diode Recovery Improves Switching &
EMI Performance
l 30V Gate Voltage Rating Improves Robustness
l Fully Characterized Avalanche SOA
VDSS
RDS(on)
ID
typ.
max.
D
G
S
HEXFET® Power MOSFET
150V
12m:
15.5m:
78A
D
S
GD
TO-247AC
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current d
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
EAS (Thermally limited)
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case g
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient g
Max.
78 c
55
330
310
2.0
±30
210
-55 to + 175
300
10lbxin (1.1Nxm)
Typ.
–––
0.24
–––
Max.
0.49
–––
40
Units
A
W
W/°C
V
mJ
°C
Units
°C/W
www.irf.com
1
6/23/06

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