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PDF V23990-P767-A-PM Data sheet ( Hoja de datos )
| Número de pieza | V23990-P767-A-PM | |
| Descripción | Flow PIM 2 | |
| Fabricantes | Tyco | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de V23990-P767-A-PM (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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flow PIM 2
Features
● 3~rectifier,BRC,Inverter, NTC
● Very Compact housing, easy to route
● IGBT4/ EmCon4 technology for low saturation losses
and improved EMC behavior
Target Applications
● Motor Drives
● Power Generation
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Types
● V23990-P767-A-PM
V23990-P767-A-PM
taget datasheet
1200V/35A
flowPIM2 housing
Schematic
Parameter
Maximum Ratings
Symbol
Condition
Value
Input Rectifier Diode
Repetitive peak reverse voltage
Forward current per diode
Surge forward current
I2t-value
Power dissipation per Diode
Maximum junction temperature
VRRM
IFAV
IFSM
I2t
Ptot
Tjmax
DC current
tp=10ms
Tj=Tjmax
Th=80°C
Tc=80°C
Tj=25°C
Th=80°C
Tc=80°C
1600
40
400
800
58
150
Transistor Inverter
Collector-emitter break down voltage
VCE
1200
DC collector current
IC Tj=Tjmax
Th=80°C
Tc=80°C
39
Repetitive peak collector current
Icpuls
tp limited by Tjmax
105
Power dissipation per IGBT
Ptot Tj=Tjmax
Th=80°C
Tc=80°C
112
Gate-emitter peak voltage
VGE
±20
Short circuit ratings*
tSC Tj≤150°C
VCC VCC
10
800
Maximum junction temperature
Tjmax
175
* It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits
Unit
V
A
A
A2s
W
°C
V
A
A
W
V
µs
V
°C
copyright Tyco Electronics
1
Revision: 1
1 page  
Parameter
Transistor BRC
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
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Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
BRC inverse diode
Diode forward voltage
Reverse leakage current
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Diode BRC
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of reverse recovery current
Reverse recovery energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
NTC Thermistor
Rated resistance
Deviation of R100
Power dissipation given Epcos-Type
B-value
Symbol
Characteristic Values
Conditions
VGE(V) or
VGS(V)
Vr(V) or
VCE(V) or
VDS(V)
IC(A) or IF(A)
or ID(A)
T(°C)
V23990-P767-A-PM
taget datasheet
Value
Min Typ Max
Unit
VGE(th) VCE=VGE
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
td(off)
tf
R=tbdΩ
Eon
Eoff
Cies
Coss f=1MHz
Crss
QGate
RthJH
RthJC
Thermal grease
thickness≤50um
λ = 0,61 W/mK
15
0
20
0
15
1200
0
25
0,00085
25
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
5 5,8 6,5 V
1,6 1,85 2,1
V
0,0024
mA
120 nA
- Ohm
tbd
tbd
tbd
tbd
tbd
tbd
1,43
ns
ns
ns
ns
mWs
mWs
nF
0,115
nF
0,085
nF
tbd nC
0,87
K/W
K/W
VF
Ir
RthJH
RthJC
Thermal foil
thickness=76um
Kunze foil KU-ALF5
10
600
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
tbd
tbd
tbd
1,87
V
uA
K/W
K/W
VF
Ir
IRRM
trr Rgon=tbd Ω
Qrr Rgon=tbd Ω
di(rec)max
/dt
Erec
RthJH
RthJC
Thermal foil
thickness=76um
25
Tj=25°C
1,35 1,7 2,05
Tj=125°C
V
mA
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
tbd
tbd
A
tbd
tbd
ns
tbd
tbd
mC
tbd A/ms
Tj=25°C
Tj=125°C
tbd
tbd
mWs
1,53
K/W
K/W
R25 Tol. ±5%
DR/R R100=1503Ω
P
B(25/100) Tol. ±3%
Tj=25°C
Tc=100°C
Tj=25°C
Tj=25°C
20,9
22
2,9
210
3980
23,1
kOhm
%/K
mW
K
copyright Tyco Electronics
5
Revision: 1
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet V23990-P767-A-PM.PDF ] | |
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