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PDF EN29LV800A Data sheet ( Hoja de datos )
| Número de pieza | EN29LV800A | |
| Descripción | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory | |
| Fabricantes | Eon Silicon Solution | |
| Logotipo |  |
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EN29LV800A
EN29LV800A
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
FEATURES
• Single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read
and write operations and for compatibility with
high performance 3.3 volt microprocessors.
• Manufactured on 0.18 µm triple-metal double
poly triple-well CMOS Flash Technology
• High performance
www.DataSheet-4UA.cccoemss times as fast as 55 ns
• Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1 µA typical standby current (standard access
time to active mode)
• Flexible Sector Architecture:
- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,
and fifteen 64-Kbyte sectors (byte mode)
- One 8-Kword, two 4-Kword, one 16-Kword
and fifteen 32-Kword sectors (word mode)
• Sector protection:
- Hardware locking of sectors to prevent
program or erase operations within individual
sectors
Additionally, temporary Sector Unprotect
allows code changes in previously locked
sectors.
• High performance program/erase speed
- Byte/Word program time: 8µs typical
- Sector erase time: 500ms typical
• JEDEC Standard Embedded Erase and
Program Algorithms
• JEDEC standard DATA# polling and toggle
bits feature
• Single Sector and Chip Erase
• Sector Unprotect Mode
• Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
• Low Vcc write inhibit < 2.5V
• Minimum 1,000K endurance cycle
• Package Options
- 48-pin TSOP (Type 1)
- 48-ball 6mm x 8mm FBGA
• Commercial and industrial temperature
Range
GENERAL DESCRIPTION
The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs.
The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 55ns
to eliminate the need for WAIT statements in high-performance microprocessor systems.
The EN29LV800A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector or full chip erase operation, where each sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain
a minimum of 1,000K program/erase cycles on each sector.
This Data Sheet may be revised by subsequent versions 1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2005/01/10
1 page  
EN29LV800A
TABLE 2B. BOTTOM BOOT BLOCK SECTOR ARCHITECTURE
Sector
ADDRESS RANGE
(X16)
(X8)
SECTOR
SIZE
(Kbytes/ A18 A17 A16 A15 A14 A13 A12
Kwords)
18 78000h-7FFFFh F0000h – FFFFFh 64/32 1 1 1 1 X X X
17
70000h-77FFFh E0000h – EFFFFh 64/32
1 1 1 0XXX
16 68000h-6FFFFh D0000h – DFFFFh 64/32 1 1 0 1 X X X
www.DataSheet4U.1c5om 60000h-67FFFh
14 58000h-5FFFFh
C0000h – CFFFFh
B0000h - BFFFFh
64/32
64/32
1 1 0 0XXX
1 0 1 1XXX
13
50000h-57FFFh A0000h - AFFFFh
64/32
1 0 1 0XXX
12 48000h-4FFFFh 90000h – 9FFFFh 64/32 1 0 0 1 X X X
11
40000h-47FFFh 80000h – 8FFFFh
64/32
1 0 0 0XXX
10
38000h-3FFFFh 70000h –7FFFFh
64/32
0 1 1 1XXX
9
30000h-37FFFh 60000h – 6FFFFh
64/32
0 1 1 0XXX
8
28000h-2FFFFh 50000h – 5FFFFh
64/32
0 1 0 1XXX
7
20000h-27FFFh 40000h – 4FFFFh
64/32
0 1 0 0XXX
6
18000h-1FFFFh 30000h – 3FFFFh
64/32
0 0 1 1XXX
5
10000h-17FFFh 20000h – 2FFFFh
64/32
0 0 1 0XXX
4
08000h-0FFFFh 10000h – 1FFFFh
64/32
0 0 0 1XXX
3
04000h-07FFFh 08000h – 0FFFFh
32/16
0 0 0 0 1XX
2 03000h-03FFFh 06000h – 07FFFh 8/4 0 0 0 0 0 1 1
1 02000h-02FFFh 04000h – 05FFFh 8/4 0 0 0 0 0 1 0
0 00000h-01FFFh 00000h – 03FFFh 16/8 0 0 0 0 0 0 X
This Data Sheet may be revised by subsequent versions
5
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2005/01/10
5 Page 
EN29LV800A
COMMAND DEFINITIONS
The operations of EN29LV800A are selected by one or more commands written into the command
register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program, Sector Erase,
Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data sequences
written at specific addresses via the command register. The sequences for the specified operation
are defined in the Command Definitions table (Table 5). Incorrect addresses, incorrect data values
or improper sequences will reset the device to Read Mode.
Table 5. EN29LV800A Command Definitions
Bus Cycles
Command
Sequence
1st
Cycle
2nd
Cycle
3rd
Cycle
4th
Cycle
5th
Cycle
Addr Data Addr Data Addr Data Addr Data Addr Data
Read
1 RA RD
Reset
1 xxx F0
www.DataSheet4U.com
Manufacturer
ID
Word
Byte
4
555
AA
AAA
2AA
55
555
555
AAA
90
000/ 7F/
100 1C
000/ 7F/
200 1C
Device ID
Top Boot
Word 4 555 AA 2AA 55
Byte AAA 555
555 90
AAA
X01 22DA
X02 DA
Device ID
Bottom Boot
Word 4 555 AA 2AA 55
Byte AAA 555
555 90
AAA
X01 225B
X02 5B
Word
Sector Protect
Verify
Byte
4
555
AA
AAA
2AA
55
555
555
AAA
90
(SA)
X02
(SA)
X04
XX00
XX01
00
01
Program
Word
Byte
4
555
AAA
AA
2AA
555
55
555
AAA
A0
PA PD
Unlock Bypass
Word
Byte
3
555
AAA
AA
2AA
555
55
555
AAA
20
Unlock Bypass Program 2 XXX A0 PA PD
Unlock Bypass Reset
2 XXX 90 XXX 00
Chip Erase
Word
Byte
6
555
AAA
AA
2AA
555
55
555
AAA
80
555
AAA
AA
2AA
555
55
Sector Erase
Word
Byte
6
555
AAA
AA
2AA
555
55
555
AAA
80
555
AAA
AA
2AA
555
55
Erase Suspend
1 xxx B0
Erase Resume
1 xxx 30
Address and Data values indicated in hex
RA = Read Address: address of the memory location to be read. This is a read cycle.
RD = Read Data: data read from location RA during Read operation. This is a read cycle.
PA = Program Address: address of the memory location to be programmed. X = Don’t-Care
PD = Program Data: data to be programmed at location PA
SA = Sector Address: address of the Sector to be erased or verified. Address bits A18-A12 uniquely select any Sector.
6th
Cycle
Addr Data
555
AAA
SA
10
30
Reading Array Data
The device is automatically set to reading array data after power up. No commands are required to
retrieve data. The device is also ready to read array data after completing an Embedded Program
or Embedded Erase algorithm.
Following an Erase Suspend command, Erase Suspend mode is entered. The system can read
array data using the standard read timings, with the only difference in that if it reads at an address
within erase suspended sectors, the device outputs status data. After completing a programming
This Data Sheet may be revised by subsequent versions 11 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2005/01/10
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet EN29LV800A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EN29LV800 | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory | Eon Silicon Solution |
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| EN29LV800C | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory | Eon Silicon Solution |
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