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BL - PNP Silicon Epitaxial Planar Transistor

Numéro de référence S9012
Description PNP Silicon Epitaxial Planar Transistor
Fabricant BL 
Logo BL 





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S9012 fiche technique
BL Galaxy Electrical
PNP Silicon Epitaxial Planar Transistor
FEATURES
z High Collector Current.(IC= -500mA
z Complementary To S9013.
z Excellent HFE Linearity.
Pb
Lead-free
www.DataSheet4UA.cPomPLICATIONS
z High Collector Current.
ORDERING INFORMATION
Type No.
Marking
S9012
2T1
Production specification
S9012
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-40
VCEO
Collector-Emitter Voltage
-25
VEBO
Emitter-Base Voltage
-5
IC Collector Current -Continuous
-500
PC Collector Dissipation
300
Tj,Tstg
Junction and Storage Temperature
-55~150
Units
V
V
V
mA
mW
Document number: BL/SSSTC081
Rev.A
www.galaxycn.com
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