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What is TIP122?

This electronic component, produced by the manufacturer "Diotec Semiconductor", performs the same function as "(TIP120 - TIP122) Si-Epitaxial Planar Darlington Power Transistors".


TIP122 Datasheet PDF - Diotec Semiconductor

Part Number TIP122
Description (TIP120 - TIP122) Si-Epitaxial Planar Darlington Power Transistors
Manufacturers Diotec Semiconductor 
Logo Diotec Semiconductor Logo 


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TIP120 ... TIP122
TIP120 ... TIP122
NPN
Si-Epitaxial Planar Darlington Power Transistors
Si-Epitaxial Planar Darlington-Leistungs-Transistoren
Version 2006-10-17
10±0.2
Max. power dissipation with cooling
Max. Verlustleistung mit Kühlung
4 3.8
www.DataSheet4U.com
Type
Typ
123
1.5
0.9
2.54
Dimensions - Maße [mm]
1 = B 2/4 = C 3 = E
Collector current
Kollektorstrom
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
NPN
65 W
5A
TO-220AB
2.2 g
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
TIP120 TIP121 TIP122
Collector-Emitter-volt. – Kollektor-Emitter-Spg. B open
VCEO
60 V
80 V
100 V
Collector-Base-voltage – Kollektor-Basis-Spg.
E open
VCBO
60 V
80 V
100 V
Emitter-Base-voltage – Emitter-Basis-Spannung C open
VEBO
5V
Power dissipation – Verlustleistung
without cooling – ohne Kühlung
with cooling – mit Kühlung
TA = 25°C
TC = 25°C
Ptot
Ptot
2 W 1)
65 W
Collector current – Kollektorstrom (dc)
IC 5 A
Peak Collector current – Kollektor-Spitzenstrom
Base current – Basisstrom (dc)
ICM 8 A
IB 120 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj -55...+150°C
TS -55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
IC = 0.5 A, VCE = 3 V
IC = 3 A, VCE = 3 V
Small signal current gain – Kleinsignal-Stromverstärkung
IC = 3 A, VCE = 4 V, f = 1 MHz
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
hFE 1000
hFE 1000
hfe 4
1 Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 Tested with pulses tp = 300 µs, duty cycle 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1


Part Details

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TIP122 darlington transistor


1. Complementary Darlington Transistor - ST

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