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C5353 fiches techniques PDF

Toshiba - NPN Transistor - 2SC5353

Numéro de référence C5353
Description NPN Transistor - 2SC5353
Fabricant Toshiba 
Logo Toshiba 





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C5353 fiche technique
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC5353
2SC5353
Switching Regulator and High Voltage Switching
Applications
High-Speed DC-DC Converter Applications
Unit: mm
Excellent switching times: tr = 0.7 μs (max), tf = 0.5 μs (max)
High collectors breakdown voltage: VCEO = 800 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
900
800
7
3
5
1
2.0
25
150
www.DataSheet.co.kr
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10
Datasheet pdf - http://www.DataSheet4U.net/

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