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Numéro de référence | 2N6547 | ||
Description | (2N6546 / 2N6547) NPN POWER SILICON TRANSISTOR | ||
Fabricant | Microsemi Corporation | ||
Logo | |||
1 Page
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/525
Devices
www.DataSheet4U.com
2N6546
2N6547
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N6546 2N6547
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TC = +250C (1)
@ TC = +1000C (1)
Operating & Storage Temperature Range
VCEO
VCEX
VEBO
IB
IC
PT
Top, Tstg
300 400
600 850
8
10
15
175
100
-65 to +200
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Thermal Resistance, Junction-to-Case
RθJC
1.0
1) Between TC = +250C and TC = +2000C, linear derating factor (average) = 1.0 W/0C
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
2N6546
2N6547
Collector-Emitter Cutoff Current
VCE = 600 Vdc; VBE = 1.5 Vdc
2N6546
VCE = 850 Vdc; VBE = 1.5 Vdc
Emitter-Base Cutoff Current
2N6547
VEB = 8 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
V(BR)CEO
ICEX
IEBO
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
TO-3 (TO-204AA)*
Unit
0C/W
*See Appendix A for Package
Outline
Min. Max.
Unit
300 Vdc
400
1.0 mAdc
1.0
1.0 mAdc
120101
Page 1 of 2
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Pages | Pages 2 | ||
Télécharger | [ 2N6547 ] |
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