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PDF K1152 Data sheet ( Hoja de datos )
| Número de pieza | K1152 | |
| Descripción | MOSFET ( Transistor ) - 2SK1152 | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K1152 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
www.DataSheet4U.com
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
1 page  
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source
breakdown voltage
2SK1151 V(BR)DSS
2SK1152
450
500
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage 2SK1151 IDSS
drain current
2SK1152
—
—
Gate to source cutoff voltage VGS(off)
Static Drain to source 2SK1151 RDS(on)
on stateresistance 2SK1152
2.0
—
—
Forward transfer admittance |yfs|
0.6
Input capacitance
Ciss —
Output capacitance
Coss —
Rwwevwe.DrsaetatSrahneseft4eUr .ccaopmacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
—
—
—
—
—
Body to drain diode reverse
recovery time
t rr
—
Note: 1. Pulse test
Typ
—
—
—
—
—
3.5
4.0
1.1
160
45
5
5
10
20
10
1.0
220
2SK1151(L)(S), 2SK1152(L)(S)
Max
—
Unit
V
Test conditions
ID = 10 mA, VGS = 0
—V
±10 µA
100 µA
3.0 V
5.5 Ω
6.0
—S
— pF
— pF
— pF
— ns
— ns
— ns
— ns
—V
— ns
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 1 A, VGS = 10 V *1
ID = 1 A, VDS = 20 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 1 A, VGS = 10 V,
RL = 30 Ω
IF = 1.5 A, VGS = 0
IF = 1.5 A, VGS = 0,
diF/dt = 100 A/µs
3
5 Page 
6.5 ± 0.5
5.4 ± 0.5
2SK1151(L)(S), 2SK1152(L)(S)
2.3 ± 0.2
0.55 ± 0.1
As of January, 2001
Unit: mm
(4.9)
2.29 ± 0.5
www.DataSheet4U.com
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
0 – 0.25
0.55 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
DPAK (S)-(1),(2)
—
Conforms
0.28 g
9
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet K1152.PDF ] | |
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