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PDF K2370 Data sheet ( Hoja de datos )
| Número de pieza | K2370 | |
| Descripción | MOSFET ( Transistor ) - 2SK2370 | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2369/2SK2370
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transis-
tor designed for high voltage switching applications.
FEATURES
• Low On-Resistance
www.DataSheet4U.com2SK2369: RDS(on) = 0.35 Ω (VGS = 10 V, ID = 10 A)
2SK2370: RDS(on) = 0.4 Ω (VGS = 10 V, ID = 10 A)
• Low Ciss Ciss = 2400 pF TYP.
• High Avalanche Capability Ratings
PACKAGE DIMENSIONS
(in millimeters)
15.7 MAX
4
φ 3.0 ± 0.2
4.7 MAX.
1.5
1 23
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage(2SAK2369/2370) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±20
A
Drain Current (pulse)*
ID(pulse) ±80
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
140 W
Total Power Dissipation (TA = 25 ˚C)
PT2
3.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 20 A
Single Avalanche Energy**
EAS 285 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
2.2 ± 0.2
5.45
1.0 ± 0.2
0.6 ± 0.1
5.45
2.8 ± 0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
Drain
Gate
Body
Diode
Source
Document No. TC-2507
(O. D. No. TC-8066)
Date Published January 1995 P
Printed in Japan
© 1995
1 page  
2SK2369/2SK2370
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0.8
VGS = 10 V
0.7 Pulsed
ID = 20 A
0.6
10 A
0.5
0.4
0.3
0.2
0.1
0
–50 –25 0 25 50 75 100 125 150 175
Tch - Channel Temperature - (˚C)
www.DataSheet4U.com
10 000
1 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
100
Coss
Crss
10
0.01
0.1 1.0 10 100
VDS - Drain to Source Voltage - (V)
1 000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
VGS = 10 V
1
VGS = 0 V
0.1
0.01
0
0.5 1.0
VSD - Source to Drain Voltage - (V)
1.5
1 000
100
SWITCHING CHARACTERISTICS
tr
tf
td (off)
td (on)
10
1.0
0.1
VDD = 150 V
VGS = 10 V
Rin = 10 Ω
1.0 10 100
ID - Drain Current - (A)
REVERSE RECOVERY TIME vs.
REVERSE DRAIN CURRENT
600
500
400
300
200
100
0
0.1
di/dt = 50 A/µs
VGS = 0 V
1.0 10 100
IF - Forward Current - (A)
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
500 20
ID = 20 A
VDD = 400 V
18
400
250 V
125 V
16
14
VGS
300 12
10
200 8
6
100 VDS
4
2
0
0 10 20 30 40 50 60 70
Qg - Gate Charge - (nC)
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K2370.PDF ] | |
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