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Numéro de référence | 2N3055 | ||
Description | SILICON PLANAR POWER TRANSISTORS | ||
Fabricant | TRANSYS | ||
Logo | |||
1 Page
Transys
Electronics
LIMITED
SILICON PLANAR POWER TRANSISTORS
2N3055 NPN
MJ2955 PNP
TO-3
Metal Can Package
General Purpose Switching and Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DwEwSwC.DRatIaPSThIeOetN4U.com
Collector Base Voltage
Collector Emitter Voltage
Collector Emitter Voltage(RBE=100Ω)
Emitter Base Voltage
Collector Current Continuous
Base Current
Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VCER
VEBO
IC
IB
Ptot
Tj, Tstg
VALUE
100
60
70
7
15
7
115
0.657
- 65 to +200
THERMAL RESISTANCE
Junction to Case
Rth(j-c)
1.52
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Sustaing Voltage
Collector Emitter Sustaing Voltage
Collector Cut Off Current
SYMBOL
VCEO(sus)*
VCER(sus)*
ICEX
TEST CONDITION
IC=200mA, IB=0
IC=200mA, RBE=100Ω
VCE=100V, VBE=(off)=1.5V
Collector Cut Off Current
Emitter Cut Off Current
Collector Emitter Saturation Voltage
Base Emitter on Voltage
DC Current Gain
ICEO
IEBO
VCE(Sat) *
VBE(on) *
hFE*
Tc=150ºC
VCE=100V, VBE=(off)=1.5V
VCE=30V, IB=0
VBE=7V, IC=0
IC=4A, IB=400mA
IC=10A, IB=3.3A
IC=4A, VCE=4V
IC=4A, VCE=4V
IC=10A, VCE=4V
MIN MAX
60
70
1.0
5.0
0.7
5.0
1.1
3.0
1.5
20 70
5
UNITS
V
V
V
V
A
A
W
W/ºC
ºC
ºC/W
UNITS
V
V
mA
mA
mA
V
V
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Pages | Pages 3 | ||
Télécharger | [ 2N3055 ] |
No | Description détaillée | Fabricant |
2N3053 | MEDIUM POWER SILICON NPN PLANAR TRANSISTOR | Seme LAB |
2N3053 | GENERAL PURPOSE TRANSISTOR(NPN SILICON) | Boca Semiconductor Corporation |
2N3053 | COMPLEMENTARY SILICON TRANSISTORS | Micro Electronics |
2N3053 | GENERAL PURPOSE MEDIUM POWER SILICON NPN PLANAR TRASISTORS | ETC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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