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PDF IPP055N03LG Data sheet ( Hoja de datos )
| Número de pieza | IPP055N03LG | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Type
OptiMOS®3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
Product Summary
V DS
R DS(on),max
ID
Type
IPP055N03L G
IPB055N03L G
IPP055N03L G
IPB055N03L G
30 V
5.5 mΩ
50 A
Package
Marking
PG-TO220-3-1
055N03L
PG-TO263-3
055N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) J-STD20 and JESD22
Rev. 1.01
ID
I D,pulse
I AS
E AS
dv /dt
V GS
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
T C=25 °C
T C=25 °C
I D=35 A, R GS=25 Ω
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=175 °C
page 1
Value
50
50
50
50
350
50
60
6
±20
Unit
A
mJ
kV/µs
V
2007-08-07
1 page  
www.DataSheet4U.com
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
160
10 V
5V
4.5 V
120
80
40
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
160
IPP055N03L G
IPB055N03L G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
20
3 V 3.2 V
16
3.5 V
4V
12
4V
3.5 V
3.2 V
3V
2.8 V
3
8
4.5 V
5V
10 V
4 11.5 V
0
0 20 40 60 80 100
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
160
120 120
80 80
40 40
175 °C
25 °C
0
012345
V GS [V]
0
0 20 40 60 80 100
I D [A]
Rev. 1.01
page 5
2007-08-07
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IPP055N03LG.PDF ] | |
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