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Infineon Technologies - Power-Transistor

Numéro de référence IPB055N03LG
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPB055N03LG fiche technique
www.DataSheet4U.com
Type
OptiMOS®3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
Product Summary
V DS
R DS(on),max
ID
Type
IPP055N03L G
IPB055N03L G
IPP055N03L G
IPB055N03L G
30 V
5.5 m
50 A
Package
Marking
PG-TO220-3-1
055N03L
PG-TO263-3
055N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) J-STD20 and JESD22
Rev. 1.01
ID
I D,pulse
I AS
E AS
dv /dt
V GS
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
T C=25 °C
T C=25 °C
I D=35 A, R GS=25
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=175 °C
page 1
Value
50
50
50
50
350
50
60
6
±20
Unit
A
mJ
kV/µs
V
2007-08-07

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