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What is IPB052N04NG?

This electronic component, produced by the manufacturer "Infineon Technologies", performs the same function as "Power-Transistor".


IPB052N04NG Datasheet PDF - Infineon Technologies

Part Number IPB052N04NG
Description Power-Transistor
Manufacturers Infineon Technologies 
Logo Infineon Technologies Logo 


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Type
OptiMOS®3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
Type
IPB052N04N G
Product Summary
V DS
R DS(on),max
ID
IPB052N04N G
40 V
5.2 m
70 A
Package
Marking
PG-TO263-3
052N04N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Gate source voltage
1) J-STD20 and JESD22
ID
I D,pulse
I AS
E AS
V GS
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
T C=25 °C
T C=25 °C
I D=70 A, R GS=25
Value
70
66
400
70
35
±20
Unit
A
mJ
V
Rev. 1.0
page 1
2007-12-11

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IPB052N04NG equivalent
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5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
250
10 V
200
150
100
50
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
250
IPB052N04N G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
12
7V
6.5 V
10
5.5 V
8
6V
6
6.5 V
7V
4
6V
10 V
5.5 V
2
5V
3
0
0 40 80 120 160 200
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
100
200 80
150 60
100 40
50
0
0
Rev. 1.0
175 °C
25 °C
246
V GS [V]
20
0
80
page 5
20 40 60 80 100
I D [A]
2007-12-11


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IPB052N04NG electronic component.


Information Total 9 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
IPB052N04NGThe function is Power-Transistor. Infineon TechnologiesInfineon Technologies

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