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PDF IPP070N06LG Data sheet ( Hoja de datos )
| Número de pieza | IPP070N06LG | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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OptiMOS® Power-Transistor
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - logic level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
IPB070N06L G IPP070N06L G
Product Summary
V DS
R DS(on),max SMD version
ID
60 V
7 mΩ
80 A
Type
IPB070N06L G
IPP070N06L G
Type
IPPaBc0k7a0gNe06L G
IMPaPr0k7in0gN06L G
Package
PG-TPOG2-6T3O-3263-3
070NP0G6L-TO220-3
Marking
PG07-T0NO0262L0-3
07007N0N060L6L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C1)
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C2)
Avalanche energy, single pulse
E AS I D=80 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=80 A, V DS=48 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
80
80
320
450
6
±20
214
-55 ... 175
55/175/56
1) Current is limited by bondwire; with an R thJC=0.7 K/W the chip is able to carry 114 A.
2) See figure 3
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.22
page 1
2006-04-07
1 page  
www.DataSheet4U.com
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
240
200
10 V
5.5 V
5V
IPB070N06L G IPP070N06L G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
15
3.5 V
4V
4.5 V
160
120
80
40
4V
3.5 V
10
5
10 V
4.5 V
5V
5.5 V
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
160
00
3 0 40 80 120 160 200
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
160
120 120
80 80
40
175 °C
25 °C
0
012345
V GS [V]
40
0
0
Rev. 1.22
page 5
20 40 60
I D [A]
80
2006-04-07
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IPP070N06LG.PDF ] | |
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