DataSheetWiki


IPP048N06LG fiches techniques PDF

Infineon Technologies - Power-Transistor

Numéro de référence IPP048N06LG
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





1 Page

No Preview Available !





IPP048N06LG fiche technique
www.DataSheet4U.com
OptiMOS® Power-Transistor
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - logic level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
IPP048N06L G IPB048N06L G
Product Summary
V DS
R DS(on),max SMDversion
ID
60 V
4.4 m
100 A
Type
IPP048N06L
IPB048N06L
Package
Marking
P-TO220-3-1
048N06L
P-TO263-3-2
048N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C1)
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C2)
Avalanche energy, single pulse
E AS I D=100 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=100 A, V DS=48 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) Current is limited by bondwire; with an RthJC=0.5 the chip is able to carry 161A
2) See figure 3
Rev. 1.11
page 1
Value
100
100
400
810
6
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2006-04-20

PagesPages 10
Télécharger [ IPP048N06LG ]


Fiche technique recommandé

No Description détaillée Fabricant
IPP048N06LG Power-Transistor Infineon Technologies
Infineon Technologies

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche