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IPP25N06S3-25 fiches techniques PDF

Infineon Technologies - Power-Transistor

Numéro de référence IPP25N06S3-25
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPP25N06S3-25 fiche technique
www.DataSheet4U.com
OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
PG-TO263-3-2
• Ultra low Rds(on)
• 100% Avalanche tested
• ESD Class 1C (HBM)
EIA/JESD22-A114-B
IPB25N06S3-25
IPI25N06S3-25, IPP25N06S3-25
Product Summary
V DS
R DS(on),max (SMD version)
ID
55 V
24.8 m
25 A
PG-TO262-3-1
PG-TO220-3-1
Type
IPB25N06S3-25
IPI25N06S3-25
IPP25N06S3-25
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Ordering Code Marking
SP0000-88000 3N0625
SP0000-87997 3N0625
SP0000-88001 3N0625
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
Pulsed drain current2)
ID
I D,pulse
T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
T C=25 °C
Avalanche energy, single pulse3) E AS I D=12 A
Drain gate voltage2)
V DG
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
25
23
100
60
55
±20
48
-55 ... +175
55/175/56
Unit
A
mJ
V
V
W
°C
Rev. 1.0
page 1
2006-04-03

PagesPages 8
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