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Numéro de référence | IPB26CNE8NG | ||
Description | Power-Transistor | ||
Fabricant | Infineon Technologies | ||
Logo | |||
1 Page
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IPB26CNE8N G IPD25CNE8N G
IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G
OptiMOS®2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max (TO252)
ID
85 V
25 mΩ
35 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G
Package
Marking
PG-TO263-3
26CNE8N
PG-TO252-3
25CNE8N
PG-TO262-3
26CNE8N
PG-TO220-3
26CNE8N
PG-TO251-3
25CNE8N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=35 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=35 A, V DS=68 V,
di /dt =100 A/µs,
T j,max=175 °C
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
Rev. 1.0
page 1
35
25
140
65
6
±20
71
-55 ... 175
55/175/56
A
mJ
kV/µs
V
W
°C
2006-02-17
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Pages | Pages 13 | ||
Télécharger | [ IPB26CNE8NG ] |
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