DataSheetWiki


IPB100N04S2-04 fiches techniques PDF

Infineon Technologies - Power-Transistor

Numéro de référence IPB100N04S2-04
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





1 Page

No Preview Available !





IPB100N04S2-04 fiche technique
www.DataSheet4U.com
OptiMOS® Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
IPB100N04S2-04
IPP100N04S2-04
Product Summary
V DS
R DS(on),max (SMD version)
ID
40 V
3.3 m
100 A
PG-TO263-3-2
PG-TO220-3-1
Type
IPB100N04S2-04
IPP100N04S2-04
Package
Ordering Code Marking
PG-TO263-3-2 SP0002-19061 PN0404
PG-TO220-3-1 SP0002-19056 PN0404
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
Pulsed drain current2)
Avalanche energy, single pulse2)
Gate source voltage4)
Power dissipation
Operating and storage temperature
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
I D,pulse T C=25 °C
E AS I D=80A
V GS
P tot T C=25 °C
T j, T stg
Value
100
100
400
810
±20
300
-55 ... +175
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2006-03-02

PagesPages 8
Télécharger [ IPB100N04S2-04 ]


Fiche technique recommandé

No Description détaillée Fabricant
IPB100N04S2-04 Power-Transistor Infineon Technologies
Infineon Technologies

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche