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Numéro de référence | IPI100N06S3-03 | ||
Description | Power-Transistor | ||
Fabricant | Infineon Technologies | ||
Logo | |||
1 Page
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OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
PG-TO263-3-2
• Ultra low Rds(on)
• 100% Avalanche tested
• ESD Class 3 (HBM)
EIA/JESD22-A114-B
IPB100N06S3-03
IPI100N06S3-03, IPP100N06S3-03
Product Summary
V DS
R DS(on),max (SMD version)
ID
55 V
3.0 mΩ
100 A
PG-TO262-3-1
PG-TO220-3-1
Type
IPB100N06S3-03
IPI100N06S3-03
IPP100N06S3-03
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Ordering Code
SP0000-87982
SP0000-87992
SP0000-87980
Marking
3PN0603
3PN0603
3PN0603
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Continuous drain current1)
I D T C=25 °C, V GS=10 V
Pulsed drain current2)
Avalanche energy, single pulse3)
I D,pulse
T C=100 °C,
V GS=10 V2)
T C=25 °C
E AS I D=50 A
Drain gate voltage2)
V DG
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
100
100
400
690
55
±20
300
-55 ... +175
55/175/56
A
mJ
V
V
W
°C
Rev. 1.0
page 1
2005-09-16
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Pages | Pages 8 | ||
Télécharger | [ IPI100N06S3-03 ] |
No | Description détaillée | Fabricant |
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