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IPB100N06S3L-03 fiches techniques PDF

Infineon Technologies - Power-Transistor

Numéro de référence IPB100N06S3L-03
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPB100N06S3L-03 fiche technique
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OptiMOS®-T Power-Transistor
Features
• N-channel - Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
PG-TO263-3-2
• Ultra low Rds(on)
• 100% Avalanche tested
• ESD Class 3 (HBM)
EIA/JESD22-A114-B
IPB100N06S3L-03
IPI100N06S3L-03, IPP100N06S3L-03
Product Summary
V DS
R DS(on),max (SMD version)
ID
55 V
2.7 m
100 A
PG-TO262-3-1
PG-TO220-3-1
Type
IPB100N06S3L-03
IPI100N06S3L-03
IPP100N06S3L-03
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Ordering Code
SP0000-87978
SP0000-87979
SP0000-87977
Marking
3PN06L03
3PN06L03
3PN06L03
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Continuous drain current1)
I D T C=25 °C, V GS=10 V
Pulsed drain current2)
Avalanche energy, single pulse3)
I D,pulse
T C=100 °C,
V GS=10 V2)
T C=25 °C
E AS I D=50 A
Drain gate voltage2)
V DG
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
100
100
400
690
55
±16
300
-55 ... +175
55/175/56
A
mJ
V
V
W
°C
Rev. 1.0
page 1
2005-09-16

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