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Infineon Technologies - Power-Transistor

Numéro de référence IPP110N06LG
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPP110N06LG fiche technique
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OptiMOS® Power-Transistor
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - logic level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
IPB110N06L G IPP110N06L G
Product Summary
V DS
R DS(on),max SMD version
ID
60 V
11 m
78 A
Type
IPB110N06L G
IPP110N06L G
Type
IPPaBc1k1a0gNe06L G
IMPaPr1k1in0gN06L G
Package
PG-TPO-T26O32-633-2-3-2
110NP0-6TLO220-3-1
Marking
PG11-T0NO0262L0-3-1
11101N0N060L6L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C1)
Avalanche energy, single pulse
E AS I D=78 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=78 A, V DS=48 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) See figure 3
Rev. 1.0
page 1
Value
78
55
312
280
6
±20
158
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2006-05-04

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