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Numéro de référence | IPB11N03LAG | ||
Description | Power-Transistor | ||
Fabricant | Infineon Technologies | ||
Logo | |||
1 Page
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OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
• N-channel
• Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
IPB11N03LA G
Product Summary
V DS
R DS(on),max (SMD version)
ID
25 V
11.2
30
mΩ
A
PG-TO263-3-2
Type
IPB11N03LA G
Package
PG-TO263-3-2
Marking
11N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current
Avalanche energy, single pulse
I D,pulse
E AS
T C=25 °C3)
I D=30 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=30 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
Rev. 1.4
page 1
Value
30
30
210
80
6
±20
52
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2006-05-11
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Pages | Pages 9 | ||
Télécharger | [ IPB11N03LAG ] |
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