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Infineon Technologies - Power-Transistor

Numéro de référence IPB12CNE8NG
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPB12CNE8NG fiche technique
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IPB12CNE8N G IPD12CNE8N G
IPI12CNE8N G IPP12CNE8N G
OptiMOS®2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max (TO252)
ID
85 V
12.4 m
67 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB12CN10N G
IPD12CNE8N G
IPI12CNE8N G
IPP12CNE8N G
Package
Marking
PG-TO263-3
12CNE8N
PG-TO252-3
12CNE8N
PG-TO262-3
12CNE8N
PG-TO220-3
12CNE8N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=67 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=67 A, V DS=68 V,
di /dt =100 A/µs,
T j,max=175 °C
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
Rev. 1.01
page 1
67
48
268
154
6
±20
125
-55 ... 175
55/175/56
A
mJ
kV/µs
V
W
°C
2006-02-17

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