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Numéro de référence | IPB160N04S2L-03 | ||
Description | Power-Transistor | ||
Fabricant | Infineon Technologies | ||
Logo | |||
1 Page
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OptiMOS® - T Power-Transistor
Features
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
IPB160N04S2L-03
Product Summary
V DS
R DS(on),max
ID
40 V
2.7 mΩ
160 A
PG-TO263-7-3
Type
IPB160N04S2L-03
Package
PG-TO263-7-3
Ordering Code
SP0002-18153
Marking
P2N04L03
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
ID
I D,pulse
T C=25 °C
T C=100 °C2)
T C=25 °C
Avalanche energy, single pulse
E AS I D=80 A, R GS=25 Ω
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
160
160
640
810
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2006-03-02
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Pages | Pages 8 | ||
Télécharger | [ IPB160N04S2L-03 ] |
No | Description détaillée | Fabricant |
IPB160N04S2L-03 | Power-Transistor | Infineon Technologies |
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