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IPB160N04S2L-03 fiches techniques PDF

Infineon Technologies - Power-Transistor

Numéro de référence IPB160N04S2L-03
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPB160N04S2L-03 fiche technique
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OptiMOS® - T Power-Transistor
Features
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
IPB160N04S2L-03
Product Summary
V DS
R DS(on),max
ID
40 V
2.7 m
160 A
PG-TO263-7-3
Type
IPB160N04S2L-03
Package
PG-TO263-7-3
Ordering Code
SP0002-18153
Marking
P2N04L03
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
ID
I D,pulse
T C=25 °C
T C=100 °C2)
T C=25 °C
Avalanche energy, single pulse
E AS I D=80 A, R GS=25
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
160
160
640
810
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2006-03-02

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