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Número de pieza | IPB16CNE8NG | |
Descripción | Power-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
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IPB16CNE8N G IPD16CNE8N G
IPI16CNE8N G IPP16CNE8N G
OptiMOS®2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max (TO252)
ID
85 V
16 mΩ
53 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB16CNE8N G
IPD16CNE8N G
IPI16CNE8N G
IPP16CNE8N G
Package
Marking
PG-TO263-3
16CNE8N
PG-TO252-3
16CNE8N
PG-TO262-3
16CNE8N
PG-TO220-3
16CNE8N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
ID
I D,pulse
T C=25 °C
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
E AS I D=53 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=53 A, V DS=68 V,
di /dt =100 A/µs,
T j,max=175 °C
Gate source voltage3)
Power dissipation
Operating and storage temperature
V GS
P tot
T j, T stg
T C=25 °C
IEC climatic category; DIN IEC 68-1
Value
53
38
212
107
6
±20
100
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
Rev. 1.01
page 1
2006-02-16
1 page www.DataSheet4U.com
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
250
10 V
8V
200
7V
150
100
6.5 V
6V
50
5.5 V
5V
0 4.5 V
0123
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
200
4
IPB16CNE8N G IPD16CNE8N G
IPI16CNE8N G IPP16CNE8N G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
50
4.5 V
45
40
5V
35
30
5.5 V
25
20
6V
15
10 V
10
5
0
50
20 40
I D [A]
60
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
80
150 60
100 40
50
0
0
Rev. 1.01
175 °C
25 °C
246
V GS [V]
20
0
80
page 5
20 40
I D [A]
60
2006-02-16
5 Page www.DataSheet4U.com
PG-TO252-3: Outline
IPB16CNE8N G IPD16CNE8N G
IPI16CNE8N G IPP16CNE8N G
Rev. 1.01
page 11
2006-02-16
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet IPB16CNE8NG.PDF ] |
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IPB16CNE8NG | Power-Transistor | Infineon Technologies |
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