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Infineon Technologies - Power-Transistor

Numéro de référence IPP050N06NG
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPP050N06NG fiche technique
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OptiMOS® Power-Transistor
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - normal level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
IPP050N06N G IPB050N06N G
Product Summary
V DS
R DS(on),max SMDversion
ID
60 V
4.7 m
100 A
Type
IPP050N06L
IPB050N06L
Package
Marking
P-TO220-3-1
050N06L
P-TO263-3-2
050N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C1)
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C2)
Avalanche energy, single pulse
E AS I D=100 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=100 A, V DS=48 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) Current is limited by bondwire; with an RthJC=0.5 the chip is able to carry 160A
2) See figure 3
Rev. 1.11
page 1
Value
100
100
400
810
6
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2006-07-06

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