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PDF IPB051NE8NG Data sheet ( Hoja de datos )
| Número de pieza | IPB051NE8NG | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
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IPB051NE8N G IPI05CNE8N G
IPP054NE8N G
OptiMOS®2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max (TO 263)
ID
85 V
5.1 mΩ
100 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB051NE8N G
IPI05CNE8N G
IPP054NE8N G
Package
Marking
PG-TO263-3
051NE8N
PG-TO262-3
05CNE8N
PG-TO220-3
054NE8N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=100 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=100 A, V DS=68 V,
di /dt =100 A/µs,
T j,max=175 °C
Gate source voltage 4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
100
100
400
826
6
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.04
page 1
2006-02-17
1 page  
www.DataSheet4U.com
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
400
8V
10 V
7V
6.5 V
320
240 6 V
IPB051NE8N G IPI05CNE8N G
IPP054NE8N G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
15
12
4.5 V
9
5V
5.5 V
160
5.5 V
80
5V
4.5 V
0
0123
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
300
4
250
200
150
100
50
175 °C
25 °C
6
3
0
50
50 100
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
200
160
120
80
40
6V
10 V
150
0
0
Rev. 1.04
246
V GS [V]
0
80
page 5
50 100
I D [A]
150
2006-02-17
5 Page 
www.DataSheet4U.com
IPB051NE8N G IPI05CNE8N G
IPP054NE8N G
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office ( www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Rev. 1.04
page 11
2006-02-17
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IPB051NE8NG.PDF ] | |
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