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C1815LT1 fiches techniques PDF

Jiangsu Changjiang Electronics - TRANSISTOR (NPN)

Numéro de référence C1815LT1
Description TRANSISTOR (NPN)
Fabricant Jiangsu Changjiang Electronics 
Logo Jiangsu Changjiang Electronics 





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C1815LT1 fiche technique
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
C1815LT1 TRANSISTOR NPN
FEATURES
SOT 23
1. BASE
2. EMITTER
3. COLLECTOR
Power dissipation
PCM : 0.2
Collector current
W Tamb=25
ICM: 0.15
A
Collector-base voltage
V(BR)CBO : 60
V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
ELECTRICAL CHARACTERISTICS Tamb=25
otherwise specified
Parameter
Symbol
unless
Test conditions
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V(BR)CBO Ic= 100 A IE=0
V(BR)CEO Ic= 0.1m A IB=0
ICBO VCB=60 V , IE=0
ICEO VCE=50 V , IB=0
IEBO VEB= 5V , IC=0
hFE(1)
VCE= 6V, IC= 2m A
VCE(sat) IC=100 mA, IB= 10m A
VBE(sat) IC=100 mA, IB= 10m A
VCE=10V, IC= 1mA
fT
f=30MHz
60
50
130
80
CLASSIFICATION OF hFE(1)
Unit : mm
TYP MAX UNIT
V
V
0.1 A
0.1 A
0.1 A
400
0.25
V
1V
MHz
DEVICE MARKING : C1815LT1=HF

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