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PDF V50100P Data sheet ( Hoja de datos )
| Número de pieza | V50100P | |
| Descripción | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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V50100P
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.372 V at IF = 5 A
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
2 x 25 A
100 V
250 A
0.64 V
150 °C
TO-247AD (TO-3P)
PIN 1
PIN 3
3
2
1
PIN 2
CASE
Features
• Trench MOS Schottky Technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in high frequency inverters, switching power
supplies, freewheeling diodes, Oring diode, dc-to-dc
converters and reverse battery protection.
Mechanical Data
Case: TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: As marked
Mounting Torque: 10 in-lbs Maximum
Maximum Ratings
(TA = 25 °C unless otherwise specified)
Parameter
Maximum repetitive peak reverse voltage
RMS reverse voltage for sine wave
DC blocking voltage
Maximum average forward rectified current
(see Fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Peak repetitive reverse current per leg
at tp = 2 µs, 1 kHz
Operating junction and storage temperature range
per device
per leg
per leg
Symbol
VRRM
VRMS
VR
IF(AV)
IFSM
IRRM
TJ, TSTG
V50100P
100
70
100
50
25
250
1.0
- 20 to + 150
Unit
V
V
V
A
A
A
°C
Document Number 88929
01-Dec-05
www.vishay.com
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet V50100P.PDF ] | |
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