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IPW60R125CP fiches techniques PDF

Infineon Technologies - CoolMOS Power Transistor

Numéro de référence IPW60R125CP
Description CoolMOS Power Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPW60R125CP fiche technique
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CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max
Q g,typ
IPW60R125CP
650 V
0.125
53 nC
PG-TO247-3-1
CoolMOS CP is specially designed for:
• Hard switching topologies, for Server and Telecom
Type
IPW60R125CP
Package
Ordering Code
PG-TO247-3-1 SP000088489
Marking
6R125P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
ID
I D,pulse
E AS
E AR
I AR
dv /dt
T C=25 °C
T C=100 °C
T C=25 °C
I D=11 A, V DD=50 V
I D=11 A, V DD=50 V
V DS=0...480 V
Gate source voltage
V GS static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Mounting torque
M3 and M3.5 screws
Rev. 2.0
page 1
Value
25
16
82
708
1.2
11
50
±20
±30
208
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2006-06-19

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