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PDF OP775D Data sheet ( Hoja de datos )
| Número de pieza | OP775D | |
| Descripción | NPN Phototransistor | |
| Fabricantes | OPTEK Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de OP775D (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Prod uct Bul le tin OP775A
Feb ru ary 2000
NPN Phototransistor with Collector-Emitter Capacitor
Types OP775A, OP775B, OP775C, OP775D
Features
• Supresses high frequency noise
• Variety of sensitivity ranges
• Wide receiving angle
• Side looking package for space limited
applications
Description
The OP775 consists of an NPN
phototransistor and 1000 pF capacitor
molded in a blue tinted epoxy package.
The internal collector-emitter capacitor
allows the device to be used in
applications where external high
frequency emissions could compromise
signal integrity.
Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted)
Collector-EmitterVoltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter-CollectorVoltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Stor age and Tem pera ture Range . . . . . . . . . . . . . . . . . . . . . . . . . . . -40° C to +100° C
Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing
iron]. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260° C(1)
PowerDissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2)
NOTES:
(1) RMA flux is rec om mended. Du ra tion can be ex tended to 10 sec. max. when flow sol der ing.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.33 mW/° C above 25° C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a
radiometric intensity level which varies less than 10% over the entire lens surface of the
phototransistor being tested.
(4)
To
calculate
typical
collector
dark
current
in
µA,
use
the
formula
ICED
=
10(0.040T
-3.4)
A
where
TA is ambient temperature in ° C.
Typi cal Per form ance Curves
Typical Spectral Response
Schematic
The device’s wide receiving angle
provides relatively even reception over a
large area.
The OP775 is 100% production tested
using an infrared light source for close
correlation with Optek’s GaAs and
GaAIAs emitters.
The side-looking package is designed for
easy PC board mounting of slotted
optical switches or optical interrupt
detectors.
Wavelength - nm
Op tek Tech nol ogy, Inc.
1215 W. Crosby Road
Car roll ton, Texas 75006
3-48
(972) 323- 2200
Fax (972) 323- 2396
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet OP775D.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| OP775A | NPN Phototransistor | OPTEK Technologies |
| OP775B | NPN Phototransistor | OPTEK Technologies |
| OP775C | NPN Phototransistor | OPTEK Technologies |
| OP775D | NPN Phototransistor | OPTEK Technologies |
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