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PDF OP750B Data sheet ( Hoja de datos )
| Número de pieza | OP750B | |
| Descripción | NPN Photo transistor | |
| Fabricantes | OPTEK Technologies | |
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Product Bulletin OP750
June 1999
NPN Phototransistor with Base-Emitter Resistor
Types OP750A, OP750B, OP750C, OP750D
Features
• Wide receiving angle
•Variety of sensitivity ranges
•Side-looking package for space
limited applications
•Base-emitter resistor provides
ambient light protection
Description
The OP750 series devices consist of an
NPN silicon phototransistor molded in a
clear epoxy package. The wide
receiving angle provides relatively even
reception over a large area. The side-
looking package is designed for easy
PC board mounting of slotted optical
switches or optical interrupt detectors.
This series is mechanically and
spectrally matched to the OP140 and
OP240 series of infrared emitting
diodes.
Absolute Maximum Ratings (TA = 25o C unless otherwise noted)
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter Reverse Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Collector DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . -40o C to +100o C
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260o C(1)
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.33 mW/o C above 25o C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a
radiometric intensity level which varies less than 10% over the entire lens surface of the
phototransistor being tested.
(4) The knee point irradiance is defined as the irradiance required to increase IC(ON) to 50 µA.
Typical Performance Curves
Typical Spectral Response
Schematic
The phototransistor has an internal
base-emitter resistor which provides
protection from low level ambient
lighting conditions. This feature is also
useful when the media being detected is
semi-transparent to infrared light in
interruptive applications.
Wavelength - nm
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
7
(972) 323-2200
Fax (972) 323-2396
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet OP750B.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| OP750A | NPN Photo transistor | OPTEK Technologies |
| OP750B | NPN Photo transistor | OPTEK Technologies |
| OP750C | NPN Photo transistor | OPTEK Technologies |
| OP750D | NPN Photo transistor | OPTEK Technologies |
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