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PDF K2411 Data sheet ( Hoja de datos )
| Número de pieza | K2411 | |
| Descripción | MOSFET ( Transistor ) - 2SK2411 | |
| Fabricantes | NEC | |
| Logotipo |  |
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 1. PDF - Telephone Tone Ringer  Hay una vista previa y un enlace de descarga de K2411 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2411, 2SK2411-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2411 is N-Channel MOS Field Effect Transistor designed
for high speed switching applications.
FEATURES
• Low On-Resistance
RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A)
RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A)
• Low Ciss Ciss = 1500 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended applica-
tions.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
60 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
ID(DC)
±30 A
Drain Current (pulse)*
ID(pulse)
±120
A
Total Power Dissipation (Tc = 25 ˚C) PT1
75 W
Total Power Dissipation (TA = 25 ˚C) PT2
1.5 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to +150 °C
Single Avalanche Current** IAS 30 A
Single Avalanche Energy**
EAS 90 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS
(in millimeter)
10.6 MAX.
10.0
3.6 ±0.2
4.8 MAX.
1.3 ±0.2
4
123
1.3 ±0.2
0.5 ±0.2
0.75 ±0.1
2.54
2.8 ±0.2
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
(10.0)
4.8 MAX.
1.3 ±0.2
4
1.0 ±0.3
1.4 ±0.2
(2.54) (2.54)
123
(0(.50R.8)R)
0.5 ±0.2
MP-25Z(SURFACE MOUNT TYPE)
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
The information in this document is subject to change without notice.
Document No. D13398EJ1V0DS00 (1st edition)
(Previous No. TC-2492)
Date Published March 1998 N CP(K)
Printed in Japan
©
1994
1 page  
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
70
60
50 VGS = 4 V
40
VGS = 10 V
30
20
10
0
–50 –25
0
ID = 15 A
25 50 75 100 125 150
Tch - Channel Temperature - °C
2SK2411, 2SK2411-Z
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10 V
VGS = 0
10
1
0 1.0 2.0 3.0
VSD - Source to Drain Voltage - V
10000
1000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
10
1 10 100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µ s
VGS = 0
100
10
0.1
1.0 10
ID - Drain Current - A
100
1000
SWITCHING CHARACTERISTICS
100
10
1.0
0.1
td (off)
tf
tr
td (on)
VDD = 30 V
VGS = 10 V
RG = 10 Ω
1.0 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 16
ID = 30 A
70 14
VDD = 48 V
60
12
50
40
VDS
30
10
VGS
8
6
20 4
10 2
0
0 10 20 30 40 50 60 70 80
Qg - Gate Charge - nC
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K2411.PDF ] | |
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