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Numéro de référence | C1008 | ||
Description | NPN Transistor - 2SC1008 | ||
Fabricant | TRANSYS Electronics Limited | ||
Logo | |||
1 Page
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Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2SC1008 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM:
0.8 W (Tamb=25℃)
Collector current
ICM: 0.7
Collector-base voltage
A
V(BR)CBO:
80 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Test conditions
Ic= 100µA , IE=0
IC= 10mA , IB=0
IE= 10µA, IC=0
VCB=60 V , IE=0
VEB= 5 V , IC=0
VCE= 2 V, IC=50mA
IC= 500mA, IB=50 mA
IC=500mA, IB=50mA
VCE=10V, IC= 50mA
MIN
80
60
8
40
30
TYP
MAX
0.1
0.1
400
0.4
1.1
UNIT
V
V
V
µA
µA
V
V
MHz
CLASSIFICATION OF hFE
Rank
Range
R
40-80
O
70-140
Y
120-240
G
200-400
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Pages | Pages 1 | ||
Télécharger | [ C1008 ] |
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