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PDF GB02N120 Data sheet ( Hoja de datos )
| Número de pieza | GB02N120 | |
| Descripción | SGB02N120 | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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SGP02N120, SGB02N120
SGD02N120
Fast IGBT in NPT-technology
• 40lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
C
G
E
P-TO-252-3-1 (D-PAK) P-TO-220-3-1
(TO-252AA)
(TO-220AB)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Type
SGP02N120
SGB02N120
SGD02N120
VCE
IC
Eoff
Tj Package
Ordering Code
1200V 2A 0.11mJ 150°C TO-220AB
Q67040-S4270
TO-263AB(D2PAK) Q67040-S4271
TO-252AA(DPAK) Q67040-S4269
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 2A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C
Short circuit withstand time1)
VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
-
Value
1200
6.2
2.8
9.6
9.6
±20
10
10
62
-55...+150
260
Unit
V
A
V
mJ
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Jul-02
1 page  
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SGP02N120, SGB02N120
SGD02N120
7A
6A
5A VGE=17V
15V
4A 13V
11V
9V
3A 7V
2A
1A
0A
0V 1V 2V 3V 4V 5V 6V 7V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
7A
6A
5A VGE=17V
15V
4A 13V
11V
9V
3A 7V
2A
1A
0A
0V 1V 2V 3V 4V 5V 6V 7V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
7A
6A
5A
4A Tj=+150°C
Tj=+25°C
3A Tj=-40°C
2A
1A
0A
3V 5V 7V 9V 11V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
6V
5V
IC=4A
4V
IC=2A
3V
IC=1A
2V
1V
0V
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
Power Semiconductors
5
Jul-02
5 Page 
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SGP02N120, SGB02N120
SGD02N120
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr S
F
t
rr
tt
SF
QQ
SF
10% I
t
rrm
di /dt
90% I r r
rrm
V
R
Figure A. Definition of switching times
Figure C. Definition of diodes
switching characteristics
τ1
r1
Tj (t)
p(t) r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Power Semiconductors
11
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH,
and stray capacity Cσ =40pF.
Jul-02
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet GB02N120.PDF ] | |
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