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Advanced Power Electronics - AP4511GM

Numéro de référence 4511GM
Description AP4511GM
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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4511GM fiche technique
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Advanced Power
Electronics Corp.
AP4511GM
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Performance
D2
D2
D2
D1 D2
DD11 D1
Description
SO-8
SO-8
GG22
S2
G1 S2
S1 G1
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G1 G2
S1
35V
25mΩ
7A
-35V
40mΩ
-6.1A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
N-channel P-channel
35 -35
±20 ±20
7 -6.1
5.7 -5
30 -30
2.0
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/
Unit
/W
Data and specifications subject to change without notice
201122041

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