|
|
PDF TIC216D Data sheet ( Hoja de datos )
| Número de pieza | TIC216D | |
| Descripción | SILICON TRIACS | |
| Fabricantes | Bourns | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de TIC216D (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
TIC216 SERIES
SILICON TRIACS
● Sensitive Gate Triacs
● 6 A RMS
● Glass Passivated Wafer
● 400 V to 800 V Off-State Voltage
● Max IGT of 5 mA (Quadrants 1 - 3)
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
TIC216D
Repetitive peak off-state voltage (see Note 1)
TIC216M
TIC216S
TIC216N
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)
Peak on-state surge current full-sine-waveat (or below) 25°C case temperature (see Note 3)
Peak gate current
Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 µs)
Average gate power dissipation at (or below) 85°C case temperature (see Note 4)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
SYMBOL
VDRM
IT(RMS)
ITSM
IGM
PGM
PG(AV)
TC
Tstg
TL
VALUE
400
600
700
800
6
60
±1
2.2
0.9
-40 to +110
-40 to +125
230
UNIT
V
A
A
A
W
W
°C
°C
°C
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 150 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for a maximum averaging time of 20 ms.
electrical characteristics at 25°C case temperature (unless otherwise noted )
IDRM
PARAMETER
Repetitive peak
off-state current
Gate trigger
IGT current
VD = rated VDRM
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
TEST CONDITIONS
IG = 0
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
TC = 110°C
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
MIN TYP MAX UNIT
±2 mA
5
-5
mA
-5
10
† All voltages are with respect to Main Terminal 1.
PRODUCT INFORMATION
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet TIC216D.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TIC216 | SILICON TRIACS |  Power Innovations Limited |
| TIC216A | (TIC216x) SILICON TRIACS |  Comset Semiconductors |
| TIC216B | (TIC216x) SILICON TRIACS | Comset Semiconductors |
| TIC216D | Triacs |  Inchange Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |