V54C3256404VE Datasheet PDF - ProMOS Technologies
| Part Number | V54C3256404VE | |
| Description | (V54C3xxxx4VE) 64Mbit SDRAM | |
| Manufacturers | ProMOS Technologies | |
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V54C365(16/80/40)4VE
64Mbit SDRAM
3.3 VOLT, TSOP II / FBGA
4M X 16, 8M X 8, 16M X 4
System Frequency (fCK)
Clock Cycle Time (tCK3)
Clock Access Time (tAC3) CAS Latency = 3
Clock Access Time (tAC2) CAS Latency = 2
6
166 MHz
6 ns
5.4 ns
5.4 ns
7PC
143 MHz
7 ns
5.4 ns
5.4 ns
7
143 MHz
7 ns
5.4 ns
6 ns
8PC
125 MHz
8 ns
6 ns
6 ns
Features
■ 4 banks x 1Mbit x 16 organization
■ 4 banks x 2Mbit x 8 organization
■ 4 banks x 4Mbit x 4 organization
■ High speed data transfer rates up to 166 MHz
■ Full Synchronous Dynamic RAM, with all signals
referenced to clock rising edge
■ Single Pulsed RAS Interface
■ Data Mask for Read/Write Control
■ Four Banks controlled by BA0 & BA1
■ Programmable CAS Latency: 2, 3
■ Programmable Wrap Sequence: Sequential or
Interleave
■ Programmable Burst Length:
1, 2, 4, 8, and full page for Sequential Type
1, 2, 4, 8 for Interleave Type
■ Multiple Burst Read with Single Write Operation
■ Automatic and Controlled Precharge Command
■ Random Column Address every CLK (1-N Rule)
■ Power Down Mode
■ Auto Refresh and Self Refresh
■ Refresh Interval: 4096 cycles/64 ms
■ Available in 54-ball FBGA, 60-ball FBGA, and
54-Pin TSOPII
■ LVTTL Interface
■ Single +3.3 V ±0.3 V Power Supply
Description
The V54C365(16/80/40)4VE is a four bank Syn-
chronous DRAM organized as 4 banks x 1Mbit x 16,
4 banks x 2Mbit x 8, or 4 banks x 4Mbit x 4. The
V54C365(16/80/40)4VE achieves high speed data
transfer rates up to 166 MHz by employing a chip
architecture that prefetches multiple bits and then
synchronizes the output data to a system clock
All of the control, address, data input and output
circuits are synchronized with the positive edge of
an externally supplied clock.
Operating the four memory banks in an inter-
leaved fashion allows random access operation to
occur at higher rate than is possible with standard
DRAMs. A sequential and gapless data rate of up to
166 MHz is possible depending on burst length,
CAS latency and speed grade of the device.
Device Usage Chart
Operating
Temperature
Range
0°C to 70°C
Package Outline
C/S/T
•
6
•
Access Time (ns)
7PC
•
7
•
8PC
•
Power
Std.
•
L
•
Temperature
Mark
Blank
V54C365(16/80/40)4VE Rev. 1.4 March 2006
1
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ProMOS TECHNOLOGIES
V54C365(16/80/40)4VE
64Mb SDRAM Pin Assignment
(54-Pin TSOP-II)
Description Pkg.
TSOP-II
T/I
Pin Count
54
x16 Configuration
Top View
VCC
I/O1
VCCQ
I/O2
I/O3
VSSQ
I/O4
I/O5
VCCQ
I/O6
I/O7
VSSQ
I/O8
VCC
LDQM
WE
CAS
RAS
CS
BA0
BA1
A10
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54 VSS
53 I/O16
52 VSSQ
51 I/O15
50 I/O14
49 VCCQ
48 I/O13
47 I/O12
46 VSSQ
45 I/O11
44 I/O10
43 VCCQ
42 I/O9
41 VSS
40 NC
39 UDQM
38 CLK
37 CKE
36 NC
35 A11
34 A9
33 A8
32 A7
31 A6
30 A5
29 A4
28 VSS
Pin Names
CLK
CKE
CS
RAS
CAS
WE
A0–A11
BA0, BA1
I/O1–I/O16
LDQM, UDQM
VCC
VSS
VCCQ
VSSQ
NC
Clock Input
Clock Enable
Chip Select
Row Address Strobe
Column Address Strobe
Write Enable
Address Inputs
Bank Select
Data Input/Output
Data Mask
Power (+3.3V)
Ground
Power for I/O’s (+3.3V)
Ground for I/O’s
Not connected
V54C365(16/80/40)4VE Rev. 1.4 March 2006
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for V54C3256404VE electronic component. |
| Information | Total 30 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ V54C3256404VE.PDF Datasheet ] | |
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| Part Number | Description | MFRS |
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| V54C3256404VE | The function is (V54C3xxxx4VE) 64Mbit SDRAM. ProMOS Technologies | |
| V54C3256404VS | The function is 256Mbit SDRAM 3.3 VOLT/ TSOP II / SOC BGA / WBGA PACKAGE 16M X 16/ 32M X 8/ 64M X 4. Mosel Vitelic Corp | |
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