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PDF 2N2270 Data sheet ( Hoja de datos )
| Número de pieza | 2N2270 | |
| Descripción | NPN Silicon Planar Transistor | |
| Fabricantes | CDIL | |
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTOR
2N2270
TO-39
Metal Can Package
Amplifier Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Emitter Voltage, RBE < 10Ω
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
VCEO
VCER
VCBO
VEBO
IC
PD
PD
Tj, Tstg
VALUE
45
60
60
7.0
1.0
1.0
5.71
5.0
28.6
- 65 to +200
THERMAL RESISTANCE
Junction to Ambient in free air
Junction to Case
Rth (j-a)
Rth (j-c)
175
35
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
Collector Emitter Voltage
Collector Base Voltage
VCER
VCBO
IC=1mA, RBE=10Ω
IC=100µA, IE=0
Emitter Base Voltage
VEBO
IE=100µA, IC=0
Collector Cut Off Current
ICBO
VCB=60V, IE=0
VCB=60V, IE=0, Ta=150ºC
Emitter Cut Off Current
IEBO
VEB=5V, IC=0
Collector Emitter Saturation Voltage *VCE (sat)
IC=150mA, IB=15mA
Base Emitter Saturation Voltage
*VBE (sat)
IC=150mA, IB=15mA
DC Current Gain
*hFE IC=1mA, VCE=10V
IC=150mA, VCE=10V
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
MIN
45
60
60
7
30
50
UNIT
V
V
V
V
A
W
mW/ ºC
W
mW/ ºC
ºC
ºC/W
ºC/W
TYP MAX
50
100
100
0.9
1.2
UNIT
V
V
V
V
nA
µA
nA
V
V
200
2N2270Rev_1 040904E
Continental Device India Limited
Data Sheet
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N2270.PDF ] | |
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