DataSheetWiki


IRF3205ZS fiches techniques PDF

International Rectifier - AUTOMOTIVE MOSFET

Numéro de référence IRF3205ZS
Description AUTOMOTIVE MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





1 Page

No Preview Available !





IRF3205ZS fiche technique
www.DataSheet4U.com
PD - 94653B
AUTOMOTIVE MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
G
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
TO-220AB
IRF3205Z
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
iCase-to-Sink, Flat Greased Surface
iJunction-to-Ambient
jJunction-to-Ambient (PCB Mount)
www.irf.com
IRF3205Z
IRF3205ZS
IRF3205ZL
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 6.5m
S ID = 75A
D2Pak
IRF3205ZS
TO-262
IRF3205ZL
Max.
110
78
75
440
170
1.1
± 20
180
250
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
0.50
–––
–––
Max.
0.90
–––
62
40
Units
°C/W
1
10/7/03

PagesPages 12
Télécharger [ IRF3205ZS ]


Fiche technique recommandé

No Description détaillée Fabricant
IRF3205Z AUTOMOTIVE MOSFET International Rectifier
International Rectifier
IRF3205ZL AUTOMOTIVE MOSFET International Rectifier
International Rectifier
IRF3205ZLPbF AUTOMOTIVE MOSFET International Rectifier
International Rectifier
IRF3205ZPbF AUTOMOTIVE MOSFET International Rectifier
International Rectifier

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche