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PDF K8F5715EBM Data sheet ( Hoja de datos )
| Número de pieza | K8F5715EBM | |
| Descripción | 256Mb M-die MLC NOR Specification | |
| Fabricantes | Samsung Electronics | |
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K8F56(57)15ET(B)M
NOR FLASH MEMORY
256Mb M-die MLC NOR Specification
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure couldresult in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
1 Revision 1.2
September, 2006
1 page  
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K8F56(57)15ET(B)M
88 Ball FBGA TOP VIEW (BALL DOWN)
NOR FLASH MEMORY
12
3 45 6
78
A DU
DU
DU DU
B NC
NC
WP
Vss
VCC
VCC
NC
NC
C A20
RFU
NC
Vss
RFU
CLK
DPD
NC
D NC A23 RFU NC RFU NC NC NC
E A21
NC
NC
NC
AVD
VPP
A17
A22
F A16 NC RFU RESET WE A19 NC A18
G NC A/DQ7 A/DQ13 A/DQ5 A/DQ10 A/DQ2 RDY
NC
H RFU A/DQ15 A/DQ14 A/DQ12 A/DQ3 A/DQ1 A/DQ8 NC
J RFU
OE A/DQ6 A/DQ4 A/DQ11 A/DQ9 A/DQ0 Vccq
K CE
RFU
RFU
RFU
Vccq
VCC
Vccq
RFU
L VSS
Vss
Vccq
VCC
Vss
Vss
Vss
Vss
M DU
DU
DU DU
5 Revision 1.2
September, 2006
5 Page 
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K8F56(57)15ET(B)M
NOR FLASH MEMORY
Table 5. Command Sequences (Continued)
Command Definitions
Write to Buffer (Note 14)
Add
Data
Program buffer to Flash (Note 14)
Add
Data
Write to Buffer Abort Reset (Note 15)
Add
Data
Set Burst Mode Configuration Register (Note 16)
Add
Data
Enter OTP Block Region
Add
Data
Exit OTP Block Region
Add
Data
Cycle
3
1
3
3
3
4
1st Cycle
555H
AAH
BA
29H
555H
AAH
555H
AAH
555H
AAH
555H
AAH
2nd Cycle
2AAH
55H
2AAH
55H
2AAH
55H
2AAH
55H
2AAH
55H
3rd Cycle
BA
25H
XXX
F0H
Note 17
C0H
XXX
70H
555H
75H
4th Cycle
BA
WC
XXX
00H
5th Cycle
PA
PD
6th Cycle
WBL
PD
Notes:
1. RA : Read Address , PA : Program Address, RD : Read Data, PD : Program Data , BA : Block Address (A23 ~ A14), DA : Bank Address (A23 ~ A20)
ABP : Address of the block to be protected or unprotected , DI :Die revision ID, CR : Configuration Register Setting,
WBL : Write Buffer Location, WC : Word Count
2. The 4th cycle data of autoselect mode and RD are output data. The others are input data.
3. Data bits DQ15–DQ8 are don’t care in command sequences, except for RD, PD and Device ID.
4. Unless otherwise noted, address bits A23–A11 are don’t cares.
5. The reset command is required to return to read mode.
If a bank entered the autoselect mode during the erase suspend mode, writing the reset command returns that bank to the erase suspend mode.
If a bank entered the autoselect mode during the program suspend mode, writing the reset command returns that bank to the program suspend mode.
If DQ5 goes high during the program or erase operation, writing the reset command returns that bank to read mode or erase suspend mode if that
bank was in erase suspend mode.
6. The 3rd and 4th cycle bank address of autoselect mode must be same.
Device ID Data : "2208H" for Top Boot Block Device, "2209H" for Bottom Boot Block Device
7. Normal Block Protection Verify : 00H for an unprotected block and 01H for a protected block.
OTP Block Protect verify (with OTP Block Address after Entering OTP Block) : 00H for unlocked, and 01H for locked.
8. The unlock bypass command sequence is required prior to this command sequence.
9. The system may read and program in non-erasing blocks when in the erase suspend mode.
The system may enter the autoselect mode when in the erase suspend mode.
The erase suspend command is valid only during a block erase operation, and requires the bank address.
10. The erase/program resume command is valid only during the erase/program suspend mode, and requires the bank address.
11. This mode is used only to enable Data Read by suspending the Program operation.
12. Set block address(BA) as either A6 = VIH, A1 = VIH and A0 = VIL for unprotected or A6 = VIL, A1 = VIH and A0 = VIL for protected.
13. Command is valid when the device is in Read mode or Autoselect mode.
14. For Buffer Program, Firstly Enter "Write to Buffer" Command sequence and then Enter Block Address and Word Count which is the number of word
data will be programmed. Word Count is smaller than the number of data wanted to program by one, Example if 15 words need to be programmed
WC (Word Count) should be 14. After Entering Command, Enter PA/PD’s (Program Addresses/ Program Data). Finally Enter "Program buffer to Flash"
Command sequence, This starts a buffer program operation. This Device supports 32 words Buffer Program.
There is some caution points.
- The number of PA/PD’s which are entered must be WC+1
- PA’s which are entered must be same A23~A5 address bits because Buffer Address is A23~A5 address and decided by PA entered firstly.
- If PA which are entered isn’t same Buffer Address, then PA/PD which is entered may not be counted and not stored to Buffer.
- Overwrite for program buffer is also prohibited.
15. Command sequence resets device for next command after aborted write-to-buffer operation.
16. See "Set Burst Mode Configuration Register" for details.
17. On the third cycle, the data should be "C0h", address bits A10-A0 should be 101_0101_0101b, and address bits A18-A11 set the code to be
latched.
11 Revision 1.2
September, 2006
11 Page | ||
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