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PDF T2035-600G Data sheet ( Hoja de datos )
| Número de pieza | T2035-600G | |
| Descripción | HIGH PERFORMANCE TRIAC | |
| Fabricantes | STMicroelectronics | |
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® T2035-600G
HIGH PERFORMANCE TRIAC
FEATURES
HIGH COMMUTATION (dI/dt)c > 11 A/ms
without snubber
HIGH STATIC dV/dt > 500 V/µs
DESCRIPTION
The T2035-600G triac uses a high performance
SNUBBERLESSTM technology.
The part is intended for general purpose
applications using surface mount technology.
A2
A2 G
A1
D2PAK
ABSOLUTE RATINGS (limiting values)
Symbol
VDRM
VRRM
IT(RMS)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Parameter
Repetitive peak off-state voltage
Tj = 125°C
RMS on-state current
(360° conduction angle)
Tc= 100°C
Non repetitive surge peak on-state current
(Tj initial = 25°C)
I2t Value (half-cycle, 50 Hz)
tp = 8.3ms
tp = 10 ms
tp = 10 ms
Critical rate of rise of on-state current
IG = 500 mA dIG /dt = 1 A/µs.
Repetitive
F = 50 Hz
Non Repetitive
Storage temperature range
Operating junction temperature range
Maximum temperature for soldering during 10s
Value
600
Unit
V
20 A
210 A
200
200 A2s
20 A/µs
100
- 40, + 150
- 40, + 125
260
°C
°C
January 1998 - Ed: 1D
1/5
1 page  
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PACKAGE MECHANICAL DATA
D2PAK
E
L2
A
C2
L
L3
A1
B2
B
C
G
2.0 MIN.
FLAT ZONE
A2
Note 1: Max resin gate protusion = 0.5 mm
D
R
V2
FOOT PRINT DIMENSIONS (in millimeters)
T2035-600G
DIMENSIONS
REF. Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A 4.30
4.60 0.169
0.181
A1 2.49
2.69 0.098
0.106
A2 0.03
0.23 0.001
0.009
B 0.70
0.93 0.027
0.037
B2 1.40
0.055
C 0.45
0.60 0.017
0.024
C2 1.21
1.36 0.047
0.054
D 8.95
9.35 0.352
0.368
E 10.00
10.28 0.393
0.405
G 4.88
5.28 0.192
0.208
L 15.00
15.85 0.590
0.624
L2 1.27
1.40 0.050
0.055
L3 1.40
1.75 0.055
0.069
R 0.40
0.016
V2 0°
8° 0°
8°
16.90
MARKING : T2035
600G
10.30
8.90
5.08
1.30
3.70
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change withoutnotice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
© 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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