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EN25P16 fiches techniques PDF

Eon - 16 Mbit Uniform Sector Flash Memory

Numéro de référence EN25P16
Description 16 Mbit Uniform Sector Flash Memory
Fabricant Eon 
Logo Eon 





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EN25P16 fiche technique
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EN25P16
16 Mbit Uniform Sector, Serial Flash Memory
EN25P16
FEATURES
Single power supply operation
- Full voltage range: 2.7-3.6 volt
16 Mbit Serial Flash
- 16 M-bit/2048 K-byte/8192 pages
- 256 bytes per programmable page
High performance
- 75MHz clock rate
Low power consumption
- 5 mA typical active current
- 1 μA typical power down current
Uniform Sector Architecture:
- Thirty two 64-Kbyte sectors
Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
High performance program/erase speed
- Byte program time: 7µs typical
- Page program time: 1.5ms typical
- Sector erase time: 800ms typical
- Chip erase time: 18 Seconds typical
Minimum 100K endurance cycle
Package Options
- 8 pins SOP 200mil body width
- 8 contact VDFN
- 16 pin SOP 300mil body width
- All Pb-free packages are RoHS compliant
Commercial and industrial temperature Range
GENERAL DESCRIPTION
The EN25P16 is a 16M-bit (2048K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to
256 bytes at a time, using the Page Program instruction.
The EN25P16 is designed to allow either single Sector at a time or full chip erase operation. The
EN25P16 can be configured to protect part of the memory as the software protected mode. The device
can sustain a minimum of 100K program/erase cycles on each sector.
This Data Sheet may be revised by subsequent versions 1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/25

PagesPages 30
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