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PDF K3757 Data sheet ( Hoja de datos )
| Número de pieza | K3757 | |
| Descripción | MOSFET ( Transistor ) - 2SK3757 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K3757 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK3757
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3757
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.)
• High forward transfer admittance: |Yfs| = 1.0 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 450 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAR
IAR
EAR
Tch
Tstg
450
450
±30
2
5
30
103
2
3
150
−55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
−
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
4.17 °C/W
62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C during
use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 42.8 mH, RG = 25 Ω, IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with caution.
1
2
3
1 2006-11-06
1 page  
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2SK3757
rth – tw
3
1
Duty = 0.5
0.3
0.2
0.1
0.1
0.05
0.02
0.03
0.01
0.01
0.003
10 μ
SINGLE PULSE
PDM
t
T
Duty = t/T
Rth (ch-c) = 4.17°C/W
100 μ
1m
10 m
100 m
PULSE WIDTH tw (S)
1
10
SAFE OPERATING AREA
10
ID max (PULSE) *
3
ID max (CONTINUOUS)
100 μs *
1 ms *
1
DC OPERATION
0.3 Tc = 25°C
0.1
0.03 * SINGLE NONPETITIVE PULSE
Tc = 25°C
Curves must be derated linearly with VDSS max
increase in temperature
0.01
1 10
100
1000
DRAIN−SOURCE VOLTAGE VDS (V)
EAS – Tch
200
160
120
80
40
0
25 50 75 100 125 150
CHANNEL TEMPERATURE (INITIAL) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVE FORM
RG = 25 Ω
VDD = 90 V, L = 42.8 mH
ΕAS
=
1
2
⋅L ⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2006-11-06
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K3757.PDF ] | |
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