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PDF N16T1630C2B Data sheet ( Hoja de datos )
| Número de pieza | N16T1630C2B | |
| Descripción | 16Mb Ultra-Low Power Asynchronous CMOS SRAM | |
| Fabricantes | NanoAmp Solutions | |
| Logotipo |  |
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www.DataSheet4U.com
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
N16T1630C2B
16Mb Ultra-Low Power Asynchronous CMOS SRAM
1M x 16 bit
Overview
Features
The N16T1630C2B is an integrated memory
device containing a low power 16 Mbit SRAM built
using a self-refresh DRAM array organized as
1,024,576 words by 16 bits. It is designed to be
identical in operation and interface to standard 6T
SRAMS. The device is designed for low standby
and operating current and includes a power-down
feature to automatically enter standby mode. The
device operates with two chip enable (CE1 and
CE2) controls and output enable (OE) to allow for
easy memory expansion. Byte controls (UB and
LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N16T1630C2B is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard BGA packages
compatible with other standard 1Mb x 16 SRAMs.
• Single Wide Power Supply Range
2.7 to 3.6 Volts
• Very low standby current
100µA at 3.0V (Max)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Very fast access time
55ns address access option
35ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Green option for BGA package
Product Family
Part Number
Package
Type
Operating
Temperature
N16T1630C2BZ
48 - BGA
N16T1630C2BZ2 Green 48 - BGA
-40oC to +85oC
Pin Configuration (Top View)
Power
Supply (Vcc)
2.7V - 3.6V
Speed
70ns
55ns
Standby
Operating
Current (ISB), Current (Icc),
Max @ 3.0V
Max
100 µA
3 mA @ 1MHz
Pin Description
123456
A LB OE A0 A1 A2 CE2
B I/O8 UB A3 A4 CE1 I/O0
C I/O9 I/O10 A5 A6 I/O1 I/O2
D VSS I/O11 A17 A7 I/O3 VCC
E VCC I/O12 NC A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 A19 A12 A13 WE I/O7
H A18 A8
A9 A10 A11 NC
48 Ball BGA
6 x 8 mm
Pin Name
A0-A19
WE
CE1, CE2
OE
LB
UB
I/O0-I/O15
VCC
VSS
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Not Connected
(DOC#14-02-007 REV F ECN# 01-1103)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1
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NanoAmp Solutions, Inc.
N16T1630C2B
Timing
Item
Read Cycle Time
Address Access Time
Chip Enable to Valid Output
Output Enable to Valid Output
Byte Select to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Byte Select to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Byte Select Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Byte Select to End of Write
Write Pulse Width
Address Setup Time
Write Recovery Time
Write to High-Z Output
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
Symbol
tRC
tAA
tCO
tOE
tLB, tUB
tLZ
tOLZ
tBLZ
tHZ
tOHZ
tBHZ
tOH
tWC
tCW
tAW
tBW
tWP
tAS
tWR
tWHZ
tDW
tDH
tOW
-55
Min. Max.
55
55
55
30
55
5
5
5
0 25
0 25
0 25
10
55
50
50
50
50
0
0
25
25
0
5
-70
Min.
Max.
70
70
70
35
70
5
5
5
0 25
0 25
0 25
10
70
55
55
55
55
0
0
25
25
0
5
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
(DOC#14-02-007 REV F ECN# 01-1103)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
5
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet N16T1630C2B.PDF ] | |
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