(PDF) H5N3003P Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	H5N3003P
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Renesas Technology
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No Preview Available ! www.DataSheet4U.com H5N3003P Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High Speed Switching Outline TO-3P REJ03G0007-0200Z (Previous ADE-208-1547A(Z)) Rev.2.00 Aug.01.2003 D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Aug.01.2003, page 1 of 9 1 page www.DataSheet4U.com H5N3003P Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 Pulse Test 4 3 I D = 40 A 2 20 A 1 10 A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 0.2 Pulse Test VGS = 10 V,15 V 0.1 0.05 0.02 0.01 1 2 5 10 20 50 100 Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature 0.2 Pulse Test V GS = 10 V 0.16 I D = 40 A 0.12 20 A 0.08 10 A 0.04 0 –40 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 100 50 Tc = –25°C 20 10 25°C 5 75°C 2 1 V DS = 10 V 0.5 Pulse Test 0.2 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 50 100 Rev.2.00, Aug.01.2003, page 5 of 9 5 Page

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PDF H5N3003P Data sheet ( Hoja de datos )